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for Advanced Spectroscopic Evaluation 119 Bonner Hall University at Buffalo Buffalo, NY 14260-1900, USA
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The Laboratory for Advanced Spectroscopic Evaluation (LASE), was founded in 1996 to study and characterize semiconductor devices consisting of homo- and hetero-structures of III-V materials, such as GaAs/InGaAs/AlGaAs and GaN/AlGaN/InGaN, and II-VI materials such as ZnSe/ZnCdSe/ZnTe and ZnO. Over the years, we have expanded our research into characterization and development of III-Nitrides materials and devices, spintronic devices and hybrid OLEDs. We are also involved in developing optical techniques in biosensing and non-destructive testing.
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Development |
Characterization |
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Optical
non-destructive testing techniques and tools
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III-Nitride
materials and devices:
e.g. InN, InGaN, AlGaN, GaN/AlN, InGaN/GaN |
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InGaN/GaN
Optoelectronic Biosensors |
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Fabrication
of Hybrid OLEDs
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InP
and Si Nanoparticles for Hybrid OLED
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III-V
Ferromagnetic Resonant Tunneling Diode (FRTD) Resonant Tunneling Diode (RTD) |
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