Laboratory for Advanced Spectroscopic Evaluation
119 Bonner Hall
University at Buffalo
Buffalo, NY 14260-1900, USA

(716) 645-3123
(716) 645-3656

The Laboratory for Advanced Spectroscopic Evaluation (LASE), was founded in 1995 to study and characterize semiconductor devices consisting of homo- and hetero-structures of III-V materials, such as GaAs/InGaAs/AlGaAs and GaN/AlGaN/InGaN, and II-VI materials such as ZnSe/ZnCdSe/ZnTe and ZnO. Over the years, we have expanded our research to include characterization and fabrication. We routinely use ultrafast spectroscopy to characterized semiconductor nanostructures. In addition, we fabricate devices from III-Nitrides materials and hybrid organic/semiconductor nanocrystal nanostructures. In addition, we are also involved in developing optical techniques in biosensing and non-destructive testing. The current focus of our lab is on new materials and devices for sensors and photovoltaics.


Optical Characterization

Optical non-destructive testing techniques and tools
III-Nitride materials and devices:
e.g. InN, InGaN, AlGaN,
GaN/AlN, InGaN/GaN Heterostructures
Optoelectronic Biosensors
Fabrication of Photovoltaic Devices (Solar Cells)
Fabrication of Hybrid OLEDs
Semiconductor Nanocrystals for Hybrid Organic Photovoltaics and Light Emitting Devices


Laboratory for Advanced Spectroscopic Evaluation (LASE)