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Chu R. Wie

Publications

Refereed Journal Papers

  1. T.A. Tombrello, C.R. Wie, N. Itoh, and T.A. Nakayama, "Formation of ion damage tracks", Phys. Lett. 100A, 42-44 (1984). [Times cited: 20]
  2. C.R. Wie, C. Shi, M.H. Mendenhall, R.P. Livi, T. Vreeland, Jr., and T.A. Tombrello, "2 types of MeV ion beam enhanced adhesion for Au films on SiO2" Nucl. Instr. Meth. B9, 20-24 (1985). [Times cited:21]
  3. C.R. Wie, T. Vreeland, Jr., and T.A. Tombrello "Ion damage in CaF2", Nucl. Instr. Meth. B9, 25-29 (1985). [Times cited: 4]
  4. C.R. Wie, T.A. Tombrello, and T. Vreeland, Jr., "MeV ion damage in GaAs single crystals; strain saturation and role of nuclear and electronic collisions in defect production", Phys. Rev. B33, 4083-4089 (1986). [Times cited: 34]
  5. C.R. Wie, T. Vreeland, Jr., and T. A. Tombrello, "MeV ion damage in III-V semiconductors; saturation and thermal annealing of strain in GaAs and GaP crystals", Nucl. Instr. Meth. B16, 44-49 (1986). [Times cited: 7]
  6. C.R. Wie, T.A. Tombrello, and T. Vreeland, Jr., "Dynamical x-ray diffraction from nonuniform crystalline films; application to x-ray rocking curve analysis", J. Appl. Phys. 59, 3743-3746 (1986); Erratum J.Appl.Phys. 70, 2481 (1991). [Times cited: 146]
  7. G. Burns, F.H. Dacol, C.R. Wie, E. Burstein, and M. Cardona, "Phonon shifts in ion bombarded GaAs: Raman measurements", Solid State Comm., 62, 449-454 (1987). [Times cited: 45]
  8. C. R. Wie, "Defect strain fields in epitaxial GaAs", Nucl. Instr. Meth. B24/25, 562-564 (1987). [Times cited: 4]
  9. G. Burns,C.R. Wie,F.H. Dacol,J.M. Woodall,G. Pettit, "Phonon shifts and strains in strain-layered (Ga1-xInx)As"  Appl. Phys. Lett.,51,1919-21 (1987). [Times cited: 32]
  10. C.R. Wie, J.Y. Tang, T.A. Tombrello, R. Grant, and R. Housley, "Ionizing beam induced adhesion enhancement and interface chemistry for Au films on GaAs", Vacuum, 38, 157-160 (1988). [Times cited: 3]
  11. J.F. Chen and C.R. Wie, "Structural and electrical contact properties of LPE grown GaAs doped with Indium", J. Electr. Matr. 17, 501-507 (1988). [Times cited: 13]
  12. C.R. Wie, "Effects of MeV ion bombardment and thermal annealing on Ga1-xInxAs/GaAs", Nucl. Instr. Meth. B37/38, 965-969 (1988). [Times cited: 1]
  13. C.R. Wie, "Relaxation and rocking-curve broadening of strained (Ga,In)As single layers on (001) GaAs", J. Appl. Phys., 65, 2267-2271 (1989). [Times cited: 47]
  14. C.R. Wie, "X-ray interference in quantum well laser structures", J. Appl.Phys. 65, 1036-1038 (1989). [Times cited: 29]
  15. T.T. Bardin, J.G. Pronko, A.J. Mardinly, and C.R. Wie, "MeV ion implantation studies on LPE films grown on InP", Nucl. Instr. Meth.B40/41,533-6 (1989). [Times cited: 2]
  16. J.F. Chen and C.R. Wie, "Effects of In and Sb-doping in LPE growth thermodynamics and GaAs layer qualities", J. Electr. Mater. 18, 399-406 (1989). [Times cited: 13]
  17. C.R. Wie, "Rocking curve peak shift in thin semiconductor layers", J. Appl. Phys. 66, 985-988 (1989); Erratum J.Appl.Phys. 70, 2481 (1991). [Times cited: 27]
  18. C.R. Wie, G. Burns, F.H. Dacol, G.D. Pettit, and J.M. Woodall, "Strains and phonon shifts in MeV ion-bombarded GaInAs/GaAs", Nucl. Instr. Meth. B 43, 560-564 (1989). [Times cited: 0]
  19. W.K. Chen, J.F. Chen, J.C. Chen, H.M. Kim, L. Anthony, C.R. Wie, and P.L. Liu, "InP on GaAs heteroepitaxy with interface layer grown by flow-rate modulation epitaxy", Appl. Phys. Lett., 55, 749-751 (1989). [Times cited: 12]
  20. J.C. Chen, K. Xie, J.F. Chen, W.K. Chen, C.R. Wie, and P.L. Liu, "Isoelectronic doping effects in InP grown by metalorganic chemical vapor deposition", J. Vac. Sci. Tech. A 7,3119-3120 (1989). [Times cited: 2]
  21. C.R. Wie, J.C. Chen, H.M. Kim, P.L. Liu, Y.-W. Choi, and D.M. Hwang, "X-ray interference measurement of ultrathin semiconductor layers", Appl. Phys. Lett., 55, 1774-1776 (1989). [Times cited: 27]
  22. K.R. Evans, C.E. Stutz, P.W. Yu, and C.R. Wie, "Mass-spectrometric determination of Sb incorporation during III-V MBE", J.Vac.Sci.Technol. B 8, 271-275 (1990). [Times cited: 28]
  23. J.F. Chen, J.C.Chen, Y.S. Lee, Y.-W. Choi, K. Xie, P.L. Liu, W.A. Anderson, and C.R. Wie, "Shallow level, deep level, and electrical characteristics in Zn-doped GaInP/InP", J. Appl. Phys., 67, 3711-3716 (1990). [Times cited: 9]
  24. Y.W. Choi, C.R. Wie, K.R. Evans, and C.E. Stutz, "Electrical and structural study of partially-relaxed GaInAs(p+)/GaAs(n) diodes," J. Appl. Phys. 68, 1303-1309 (1990). [Times cited: 9]
  25. U.D. Venkateswaran, T. Burnett, L.J. Cui, M. Li, B.A. Weinstein, H. Kim, C.R. Wie, C. Mailhiot, K. Elcess, and C.G. Fonstad, "Comparison and spatial profiling of strain in [001] and [111] oriented InGaAs/GaAs superlattices from Raman and x-ray experiments", Phys. Rev. B.42, 3100-3108 (1990). [Times cited: 17]
  26. K.Xie and C.R. Wie, "Annealing of damage-induced deep levels in MeV Si-implanted GaAs", Nucl. Instr. Meth. B. 53, 294-300 (1991). [Times cited: 6]
  27. C.R. Wie and H.M. Kim, "Kinematical x-ray diffraction model with a new boundary condition for analysis of Bragg peak profiles of layered crystals", J. Appl. Phys. 69, 6406-6412 (1991).  [Times cited: 13]
  28. C.R. Wie and Y.W. Choi, "Designing resonant tunneling structures for increased peak current density," Appl.Phys.Lett. 58, 1077-1079 (1991). [Times cited: 7]
  29. Y.W.Choi, H.M.Kim, K.Xie and C.R.Wie, "Interface trap and interface depletion in lattice-mismatched GaInAs/GaAs heterostructures", J. Electr. Mater.20, 545-551 (1991). [Times cited: 5]
  30. K. Xie, Z.C. Huang and C.R. Wie, "Deep level studies in GaAs layers grown at low temperature," J. Electr. Mater. 20, 553-558 (1991). [Times cited: 28]
  31. Z.C.Huang, K.Xie, and C.R.Wie, "Simple and reliable method of thermoelectric effect spectroscopy for semi-insulating III-V semiconductors,"  Rev. Sci. Instr. 62, 1951-1954 (1991). [Times cited: 16]
  32. G.W. Wicks, M.W.Koch, J.A.Varriano, F.G.Johnson, C.R. Wie, H.M. Kim, and P. Colombo, "Use of a valved, solid Phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy." Appl.Phys.Lett. 59, 342-344 (1991). [Times cited: 70]
  33. J.Yi, R.Wallace, N.Sridhar, Z.Wang, K.Xie, D.D.L.Chung, C.R.Wie, K.Etemadi, W.Anderson, M.Periard, R.W.Cochrane, Y.Diawara, J.F.Currier, and J.Coleman, "Crystallized amorphous silicon for low-cost solar cells," Solar Cells 30, 403-413 (1991). [Times cited: 1]
  34. Y.W.Choi and C.R.Wie, "Increase of peak current in AlAs/GaAs resonant tunneling diodes by GaInAs emitter spacer," J.Appl.Phys. 71, 1853-9 (1992). [Times cited: 10]
  35. K.Xie, C.R.Wie, J.A.Varriano, and G.W.Wicks "Interface traps and interface recombination AlGaAs/GaAs quantum well laser diodes", Appl.Phys.Lett. 60, 428-430 (1992). [Times cited: 6]
  36. C.E.Stutz,K.R.Evans,M.J.Martinez,E.N.Taylor,J.E.Ehret,P.W.Yu, and C.R.Wie, "A study of GaAsSb/InAlAs interfaces grown by molecular beam epitaxy," J.Vac.Sci.Technol. B 10, 892-894 (1992). [Times cited: 2]
  37. L.Z.Yu and C.R.Wie, "Fabrication of MSM photoconductor on porous Silicon using micromachined Silicon mask", Electron. Lett. 28, 911-913 (1992). [Times cited: 22]
  38. D.C.Reynolds, K.R.Evans, C.E.Stutz, B.Jogai, C.R.Wie, and P.W.Yu, "Light- and heavy-hole free-exciton transitions in narrow InxGa1-xAs/GaAs quantum wells", Phys.Rev. B 45, 11156-11160 (1992). [Times cited: 8]
  39. K.Xie and C.R.Wie, "Semi-Insulating properties and photoluminescence quenching in Cu-diffused InP", J.Appl.Phys. 74, 4546-4550 (1993). [Times cited: 5]
  40. K.Xie, C.R.Wie, J.A.Varriano, and G.W.Wicks, "Improvement of GaAs/AlGaAs QW laser diodes by rapid thermal annealing", J.Electron.Mater., 23, No.1, 1-6 (1994). [Times cited: 7]
  41. Z.C.Huang,C.R.Wie,K.Evans,C.E.Stutz,and D.A.Johnston," Effects of lattice mismatch and thermal annealing on deep traps and interface states in Ga92In8As(n+)/GaAs(p) heterojunctions",J.Appl.Phys. 73,4362-4366 (1993). [Times cited: 11]
  42. Z.C.Huang and C.R.Wie, "Current-voltage characteristics of lattice-mismatched GaInAs(n+)/GaAs(p) diodes and thermal annealing effects", Solid State Electron. 36, 767-773 (1993). [Times cited: 2]
  43. H.P.Jung, K.Xie, and C.R.Wie, "Improvement of AlGaAs/GaAs quantum well laser diode by thermal annealing," J.Kor.Commun.Soc.18(3), 449-55 (1993).
  44. L.Yu and C.R.Wie, "Study of MSM photodetector fabricated on porous silicon," Sensors and Actuators A, 39, 253-257 (1993). [Times cited: 7]
  45. Z.C.Huang and C.R.Wie, "Contact-related deep-level traps in Al-GaInP interface", J.Appl.Phys., 75(2), 989-993 (1994). [Times cited: 10]
  46. C.R.Wie, "High resolution x-ray diffraction characterization of semiconductor structures," <invited review paper> Mater. Sci. Eng. Rpt.: Review 13 (1), 1 - 56 (1994). [Times cited: 41]
  47. Z.C.Huang, C.R.Wie, J.A.Varriano, M.W.Koch, and G.W.Wicks, "Phosphorus-vacancy related deep levels in GaInP layers" J.Appl.Phys, 77(4), 1587-1590 (1995). [Times cited: 18]
  48. Z.C.Huang, E.Eissler and C.R.Wie, "Role of Cd vacancy-related defects in CdTe nuclear detectors", Nucl. Instr. Meth. in Phys.Res. B 100(4), 507- (1995). [Times cited: 6]
  49. Ritter TM, Weinstein BA, Kim HM, Wie CR, Stair K, Choifeng C, Funato M, "Relation between phase-stability and mechanical defects in InGa(Al)As/GaAs and ZnSe/GaAs heterostructures under pressure", J.  Phys.  Chem.  Solids,  56 (3-4): 607-613 MAR-APR 1995.  [Times cited: 0]
  50. Z.C.Huang, C.R.Wie, J.C.Chen, and G.Davis, "Interface states in MOCVD-grown InP/InAlGaAs p-n junctions", J. Appl.Phys. 77(11), 1-3(1995)June 1. [Times cited: 1]
  51. C.R.Wie, "X-ray rocking curve analysis of strained heterointerfaces and quantum wells", Advances in X-ray Analysis 38, 165-174 (1995)
  52. C.R.Wie, "Interface structure in lattice-matched III-V heterostructures by high resolution x-ray diffraction", Journal of the Korean Physical Society, 28, s52-s59 (1995) [Times cited: 1]
  53. Z.C.Huang, C.R.Wie, I.Na, H.Luo, D.B.Mott, P.K.Shu, "High performance ZnSe photodetectors", Electron.Lett., 32, No.16, 1507-1509 (1996). [Times cited: 2]
  54. C.R.Wie, "Application of the Java Applet Technology in a Semiconductor Course", J. Mater. Edu., 19, No.1-2, 121-130 (1997). [Times cited: 2]
  55. C.R.Wie, I.Na "Development of Java Applet Resources for Solid State Materials," J. Mater. Edu., 20, No.1-2, pp.49-55 (1998). [Times cited: 4]
  56. C.R.Wie, "Educational Java Applets in Solid State Materials" <invited paper>, IEEE Trans. on Edu., 41, No.4, p.354 (1998). [Times cited: 12]
  57. M.S.Park and C.R.Wie, "Study of Radiation Effects in g-Ray Irradiated Power VDMOSFET by DCIV Technique" IEEE Trans. Nucl. Sci. 48 (6), 2285-2293 (2001). [Times cited: 7]
  58. M.S.Park,  C.I.Lee  and C.R.Wie, "DCIV and Charge Pumping Analysis of g-Ray and X-ray Irradiated Power VDMOSFET Devices" IEEE Trans. Nucl. Sci. 49 (6), 3230-3237 (2002). [Times cited: 2]
  59. Z. Wang, M.S. Park, J. E. Gillberg and C. R.Wie, "Cell Structure and Saturation Effects of Radiation-Hardened Power VDMOSFET Devices Under Extreme Dose X-ray Irradiation", Nuclear Inst. and Methods in Physics Research, B,  211, 251-258 (2003) 
  60. M.S.Park, I.Na and C.R.Wie, "A Comparison of Ionizing Radiation and High Field Stress Effects in N-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistors" J.Appl.Phys. 97(1), 14503 to 14503-6  (2005).
  61. Z. Tang,  P.Ye, D. Lee and C.R.Wie,  “Electrical Measurements of Voltage Stressed Al2O3/GaAs MOSFET”,  Microelectronics Reliability, doi:10.1016/j.microrel.2007.02.012,  Available online 30 March 2007.
  62. D.Lee, M.S.Park, Z.Tang, H.Luo R.Beresford, and C.R.Wie, "Characterization of metamorhpic buffer layers using high resolution reciprocal space mapping", J.Appl.Phys., 101, 063523 (2007)

Conference Proceedings

  1. C.R. Wie, T. Vreeland, Jr., and T.A. Tombrello, "Strain/damage in crystalline materials bombarded by MeV ions;'recrystallization' of GaAs by high dose bombardment" Mat. Res. Soc. Symp. Proc. Vol. 35, 305-313 (1985). [Times cited: 9]
  2. R.P. Livi, S. Paine, C.R.Wie, M.H.Mendenhall, J.Y.Tang, T.Vreeland,Jr., and T.A.Tombrello, "Electric contact and adhesion modification produced by high energy heavy ion bombardment for Au films on GaAs", Mat. Res. Soc. Symp. Proc. Vol. 37, 467-472 (1985).
  3. C.R. Wie, T. Jones, T.A. Tombrello, T. Vreeland, Jr., F. Xiong, Z. Zhou, G. Burns and F.H. Dacol, "Radiation defect-induced lattice contraction of InP" Mat. Res. Soc. Symp. Proc., Vol. 74, 517-522 (1987). [Times cited: 12]
  4. G. Burns, F.H. Dacol, J.E.E.Baglin, C.R. Wie, E. Burstein, and M. Cardona, "Annealing effects in ion bombarded GaAs; Raman measurements", Mat. Res. Soc. Symp. Proc., Vol.82, 86-91 (1987).
  5. C.R. Wie, K. Xie, G. Burns, F.H. Dacol, G.D. Pettit, and J.M. Woodall, "X-ray and Raman studies of MeV ion implanted GaInAs/GaAs", Matr. Res. Soc. Symp. Proc. Vol. 104, 499-504 (1987).
  6. G.Burns, C.R. Wie, F.H. Dacol, G.D. Pettit, and J.M. Woodall, "Phonon shifts and strains in strained-layer (Ga1-xInx)As", Matr. Res. Soc. Symp. Proc. Vol. 102, 553-558 (1987).
  7. C.R. Wie, H.M. Kim, and K.M. Lau, "Nondestructive characterization of GaInAs/ GaAs using rocking curve and topography", SPIE Proc.Vol.877, 41-49 (1988).  [times cited:  28]
  8. C.R. Wie, H.M. Kim, K. Xie, J.F. Chen, G. Burns, F.H. Dacol, G.D. Pettit, J.M. Woodall, "Characterization of MeV ion-implanted GaInAs/GaAs using x-ray and Raman techniques", SPIE Proc. Vol. 946, 155-163 (1988).
  9. J.F. Chen, C.R. Wie, and F.A. Junga, "X-ray, photoluminescence, and Raman studies of In-doped LPE GaAs layers", Matr. Res. Soc. Symp. Proc. Vol.144, 9-14 (1989).
  10. J.F. Chen, K. Xie, and C.R. Wie, "I-V, C-V, and Hall effect studies of In-doped LPE GaAs", Matr. Res. Soc. Symp. Proc. 144, 209-214 (1989).
  11. H.M. Kim, Y. Choi, S. Vernon, P.A. Sekula, and C.R. Wie, "X-ray studies of GaAs/Si and ZnS/Si", Matr. Res. Soc. Symp. Proc.,Vol.144, 323-328 (1989).
  12. Y.Choi, H.M.Kim, and C.R.Wie, "Annealing effects in (Ga,In)As layers", Matr. Res. Soc. Symp. Proc. Vol.144,33-38 (1989).
  13. C.R. Wie, Y. Choi, J.F. Chen, T. Vreeland, Jr. and C. Tsai, "Rocking curve peak shifts in thin heterojunction single layers",Matr. Res. Soc. Symp. Proc. Vol.145, 487-492 (1989).
  14. C.R. Wie, "X-ray interference measurement of ultrathin semiconductor layers", Mater. Res. Soc. Symp. Proc. Vol.145, 467-472 (1989).
  15. W.K. Chen, J.C. Chen, J.F. Chen, C.R. Wie, D.M. Hwang, and P.L. Liu, SPIE Proc. Vol. 1144, 100-104 (1989).
  16. Y.W. Choi, C.R. Wie, K.R. Evans, and C.E. Stutz, "Heterojunction study of Ga.9In.1As(p+)/GaAs(n) diodes: correlation of electrical and structural characteristics," Mater. Res. Soc. Symp. Proc. Vol.160, 795-800 (1990).
  17. Y.W. Choi, C.R. Wie, and S.M. Vernon, "Lattice mismatch effects in GaAsP/GaAs and GaAs/GaAsP/GaAs heterostructures," Mater. Res. Soc. Symp. Proc. Vol.160, 789-794 (1990).
  18. W.K. Chen, J.F. Chen, J.C. Chen, H.M. Kim, L. Anthony, C.R. Wie, and P.L. Liu, "Heteroepitaxial growth of InP on GaAs with interface layer grown by flow-rate modulation epitaxy,"Mater. Res. Soc. Symp. Proc. Vol.160, 401-404 (1990).
  19. S.M.Vernon, C.J.Keavney, E.D.Gagnon, M.M.Al-Jassim, N.M.Hagel, V.P.Mazzi, and C.R.Wie, "Improvement of InP-GaAs-Si quality by thermal-cycle growth", Mater. Res. Soc. Symp. Proc. Vol.198, 163-169 (1990). 
  20. C.R.Wie, K.Xie, T.T.Bardin, J.G.Pronko, D.C.Look, K.R.Evans, and C.E.Stutz, "Characterization of low-temperature GaAs buffer layers", Mater. Res. Soc. Symp. Proc. Vol.198, 383-388 (1990).  [Times cited: 7]
  21. C.R.Wie, K.Xie, D.C.Look, K.R.Evans, and C.E.Stutz, "GaAs layer grown by MBE at 200°C-300°C: Lattice parameter and resistivity", in Semi-insulating III-V Materials (proceedings of 6th conf.) ed. by A.Milnes & C. Miner, Toronto, May 1990, p.71-76 (Adam Hilger, NY). [Times cited: 13]
  22. H.M.Kim and C.R.Wie, "Improved kinematical x-ray rocking curve analysis", Mater. Res. Soc. Symp. Proc. Vol.208, pp.149-154 (1990).
  23. K.Xie, C.R.Wie, G.W.Wicks, "InP layers grown by molecular beam epitaxy at low substrate temperature," Mater. Res. Soc. Symp. Proc. Vol.241, 265-270, Dec.2-6, 1991, Boston, MA.
  24. K.Xie and C.R.Wie, "Deep trap levels and transport modeling in LT-GaAs", Mater. Res. Soc. Symp. Proc. Vol.241, 33-38, Dec.2-6, 1991, Boston, MA.
  25. K.Xie, H.M.Kim, C.R.Wie, J.A.Varriano, and G.W.Wicks, "Interface recombination and threshold current in GRINSCH-QW AlGaAs/GaAs laser diodes", Mater.Res.Soc.Symp.,Proc.Vol.240, 591-596 (1992), Dec.2-6, 1991,Boston, MA.
  26. Z.C. Huang and C.R. Wie, "Improved thermoelectric effect spectroscopy of deep levels in LT-GaAs and SI-GaAs wafers," Mat.Res.Soc.Symp.Proc. Vol.241, 63-68, Dec.2-6,1991, Boston, MA.
  27. Y.W.Choi, H.M.Kim, C.R.Wie, "Simulation design and structural/device characteristics of AlAs/GaAs resonant tunneling structures with a GaInas emitter spacer layer," Mater.Res.Soc.Symp.Proc.Vol.240, 627-632(1992), Dec.2-6, 1991, Boston, MA.
  28. Z.C.Huang, D.Johnston, K.Evans, C.E.Stutz, C.R.Wie, "Energy and depth distributions of interface states and bulk traps and their electronic effects in GaInAs/GaAs heterojunctions," Mat.Res.Soc.Symp.Proc. Vol.240, 633-640 (1992),Boston,MA,Dec.2-6, 1991.
  29. K.Xie and C.R.Wie, "Cu and Ag diffusion in InP and GaAs", Conf. Proc. of Fourth Int'l Conf. on InP and Related Materials, pp.526-529, April 21-24, 1992, Newport, RI, Paper No.THP7.
  30. T.M.Ritter, B.A.Weinstein, H.M.Kim, C.R.Wie, K.Stair, and G.Devane, "Effects of high pressure on the internal strain and stability of InAlAs films and InAlAs/GaAs multilayers on InP substrates", in Proc. of Intn'l Conf. on Phys. of Semicond., Beijing, China, Aug. 1992.
  31. B.A.Weinstein, T.M.Ritter, K.Stair, C.Choi-Feng, G.Devane, H.M.Kim, and C.R.Wie, "Strain relaxation in highly mismatched heterostructures under high pressure/temperature conditions," in Proc. of Joint AIRART/APS Meeting, Colorado Springs, CO, July 1993.
  32. C.R.Wie, "Interface states in III-V heterojunction devices", Proc. of the 15th Solid State Physics Symp. (Korean Physical Society) pp.134-163, Pohang, Korea, 6/25-26/1993.
  33. C.R.Wie, "High resolution x-ray diffraction analysis of semiconductor heterostructures," Proc. of the General Meeting of Korean Scientists and Engineers Association (Physics, Basic Sciences Div.) pp.101-105, Seoul, Korea, 8/10-12/1993.
  34. Z.C.Huang, C.R.Wie, and G.W.Wicks, "Signature of phosphorus vacancy in MBE-grown GaInP on GaAs," Mater.Res.Soc.Symp.Proc. (1994) in press, Nov.29-Dec.3, 1993, Boston, MA (paper No. L5.3).
  35. Z.C.Huang, and C.R.Wie, "Contact-related defects at Al/GaInP interface," Mater.Res.Soc.Symp.Proc. (1994) in press, Nov.29-Dec.3, 1993, Boston, MA (paper No. L3.2).
  36. J. Ross and  C.R. Wie, "Utilizing Internet technologies to teach laboratory courses", Industrial Electronics Society, 1999. IECON '99 Proceedings. The 25th Annual Conference of the IEEE , Volume: 1 , 1999 Page(s): 121 -125 vol.1
  37. C.R.Wie and Zhiyong Yuan, "Educational Java Applets: Object-Oriented Development for Reuse and Maintenance", Simulation and Multimedia in Eng. Educ, Proc. of Int'l Conf. (ICSEE2000), pp.59-64; 2000 Western Multiconference, San Diego, CA, Jan 23-27, 2000.
  38. J. Ross and C.R.Wie, "Integrating Java Applets and Remote Measurements to Teach Undergraduate Microelectronic Laboratories", Simulation and Multimedia in Eng. Educ, Proc. of Int'l Conf. (ICSEE2000), pp.191-195; 2000 Western Multiconference, San Diego, CA, Jan 23-27, 2000.
  39. Z. Yuan and C.R. Wie, "Educational Java applets for visualizing MOS memory", Microelectronic Systems Education, 2001. Proceedings. 2001 International Conference on , 2001, Page(s): 67 -68.  [Times cited: 1]

Other Publication


Book Chapters

  1. C.R.Wie, "X-ray Characterization of InGaAs" in Properties of Lattice-Matched and Strained InGaAs, (EMIS Datareviews Series No.8) pp.257-264. (IEE, an INSPEC publication, 1993) ed. P.K.Bhattacharya.
Books Edited
  1. Proceedings of International Conf. on Simulation and Multimedia in Engineering Education (ICSEE2000), ed. H.Vakilzadian and C.R.Wie, Simulation Ser. Vol.32, No.1,  ISBN: 1-56555-178-8, The Society for Computer Simulation International, 2001.

Special Presentation
  1. NSF Project Showcase on the NSF-Supported Project "Development, Testing and Dissemination of Dynamic Visual Learning Tools in Solid State Materials", American Society for Engineering Education, 1998 Annual Conference and Exposition, June 28 - July 1, 1998, Seattle, Washington.
Conference Presentations & Abstracts
  1. G. Burns, F.H. Dacol, C.R. Wie, and E. Burstein, "Raman measurements of high energy ion bombarded GaAs", Bull.Am.Phys.Soc. Vol.31,400, (1986)
  2. C. R. Wie, "Defect-induced lattice strain in epitaxial GaAs" presented at the 10th Annual Conference of Electron Device Activities in Western New York, held at RIT, Rochester, Oct.22,1986
  3. C.R.Wie,"Defect strain fields in epitaxial GaAs",Bull.Am.Phys.Soc. 31, No.8, 1288 (1986)
  4. G. Burns, F.H. Dacol, C.R. Wie, E. Burstein, and M. Cardona, "Phonon shifts in crystalline GaAs bombarded with high energy ions", Bull. Am. Phys. Soc. Vol. 32, No. 3, 775 (1987)
  5. G. Burns, F.H. Dacol, G.D. Pettit, J.M. Woodall, and C.R. Wie, "Heterojunction studies in (Ga,In)As-GaAs", Bull. Am. Phys. Soc. Vol. 32, No.3, 636 (1987)
  6. C.R. Wie, H.M. Kim, and K.M. Lau, "Characterization of MOCVD-grown GaInAs/GaAs", presented at the 11th Annual Conference of Electron Device Activities in Western New York, held at Univ. of Rochester, Nov. 17, 1987.
  7. T.T. Bardin, J.G. Pronko, A.J. Mardinly, and C.R. Wie, "MeV ion implantation studies on LPE films on InP",Bull.Am.Phys.Soc.Vol.33,No.8,1728 (1988).
  8. U.Venkatesawaran, L. Cui, M. Li, B.A. Weinstein, H.M. Kim, C.R. Wie,C. Mailhiot, K. Elcess, and C.G. Fonstad, "Mapping of internal strain in InGaAs-GaAs superlattices", Bull. Am. Phys. Soc. Vol.34, No.3, 829 (1989).
  9. C.R. Wie, "X-ray interference measurement of strained quantum wells and barriers", Bull. Am. Phys. Soc. Vol.34, No.6, 1539 (1989).
  10. S.S.Chandvankar, S.Banerjee, A.K.Srivastava, B.M.Arora, C.R.Wie, R.Baron, and W.A.Anderson, "Investigation of mismatch behavior between epitaxial layer and the substrate in LPE InGaAsP:InP system", First International Conference on Epitaxial Crystal Growth, Hungary, Apr 1-2, 1990.
  11. Y.W. Choi and C.R. Wie, "Studies of lattice-mismatch and electrical characteristics in GaInAs/GaAs and GaasP/GaAs heterostructures", presented at the Electronic Materials Conference, June 27-29, 1990, Santa Barbara, CA
  12. C.R.Wie, "Lattice parameter and electrical property of low-temperature GaAs buffer layers", presented at the Workshop on low-temperature GaAs buffer layers, April 20, 1990, San Francisco, CA.
  13. H.M.Kim and C.R.Wie "X-ray rocking curve analysis of III-V heterostructures," 2nd Regional Conference of Northwestern NY Chaptors of KSEA, 17 March 1991, University of Rochester.
  14. Y.W.Choi and C.R.Wie, "Analysis of AlAs/GaAs/AlAs resonant tunneling structures with a strained GaInAs spacer layer," 2nd Regional Conf.of Northwestern-NY Chaptors of KSEA, 17 Mar 1991, University of Rochester.
  15. K.Xie, Z.C.Huang, and C.R.Wie, "Deep level studies in the semi-insulating GaAs layer grown by MBE at low temperature", Materials Research Society Fall 1990 Meeting, Nov.26-Dec.1, 1990, Boston, MA., Paper No. B8.7
  16. C.R.Wie "X-ray and electrical characterization of strained quantum wells and RTD's and lattice-mismatched p-n heterojunctions," Electronic Materials Conference, June 19-21, 1991, Boulder, Colorado (invited talk); Abstract J.Electron.Mater., 20(7), July 1991, p.60.
  17. H.M.Kim, C.R.Wie, C.E.Stutz, "Characterization of strained quantum wells by x-ray interference," Workshop on Strained-layer Semiconductor Materials & Devices, Aug. 23-24, 1991, SUNY-Buffalo.
  18. Y.W.Choi and C.R. Wie, "Design and study of AlAs/GaAs/AlAs resonant tunneling structures with a GaInAs emitter spacer," Workshop on Strained-layer Semiconductor Materials & Devices, Aug. 23-24, 1991, SUNY-Buffalo.
  19. Y.W.Choi and C.R.Wie, "current hysteresis and negative differential resistance in resonant tunneling structures," Workshop on Strained-layer Semiconductor Materials and Devices, Aug. 23-24, 1991, SUNY-Buffalo.
  20. Z.C.Huang, C.R.Wie, C.E.Stutz, D.Johnston, "Electronic properties of lattice-mismatched GaInAs/GaAs interfaces," Workshop on Strained-layer Semiconductor Materials and Devices, Aug. 23-24, 1991, SUNY-Buffalo.
  21. C.R.Wie, "HRXRD analysis of thin epilayer, interface and quantum effect devices," 43rd Annual Denver X-Ray Conference, Aug. 1-5, 1994, Steamboat Springs, Colorado (invited talk).
  22. C.R.Wie, "Interface states in III-V heterojunction devices," The 15th Symp. of Solid State Physics, 6/25-26/1993, Pohang, Korea (Invited Talk).
  23. C.R.Wie, "High Resolution X-ray Diffraction Analysis of Thin Epilayer, Interface, and Quantum Effect Devices", 43rd ANNUAL DENVER CONFERENCE ON APPLICATIONS OF X-RAY ANALYSIS, Steamboat Springs, CO, Aug. 1-5, 1994. (Invited Talk)
  24. C.R.Wie, "Interface structure in lattice-matched III-V heterostructures by high resolution x-ray diffraction", 1994 Seoul International Symposium on Physics of Semiconductors and Applications (ISPSA '94), Oct 14-15, 1994, Korea Institute of Science & Technology (KIST), Seoul, Korea (Invited).
  25. C.R.Wie, "Application of the Java Applet Technology in Undergraduate Semiconductor Course", M.R.S. 1996 Fall Meeting, Dec.2-6, 1996, Boston, MA; Meeting ABSTRACTS, paper No. JJ5.9, page 785.
  26. C.R.Wie, "Development of Java Applet Resources for Solid State Materials," MRS 1997 Fall Meeting, Dec.1-5, 1997, Boston, MA; Meeting ABSTRACTS, paper No. OO2.6, page 730.
  27. C.R.Wie, "Educational Java Applets in Solid State Materials", 1998 Gordon Conference in Materials Science Education, July 26-29, 1998, Plymouth State College, Plymouth, New Hampshire.
  28. Z. Yuan and C.R.Wie, "Educational Java Applets for Visualizing MOS Memory", 2001 International Conference on Microelectronic Systems Education, 17 - 18 June 2001, Las Vegas, Nevada
  29. M-S Park and C.R.Wie, "Measurements of Interface Recombination Currents by DCIV in g-Ray Irradiated Power VDMOSFET", 38th Annual Int'l Nuclear and Space radiation Effects Conf., Vancouver, BC, July 16-20, 2001.

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UB EE faculty are working in analog VLSI design, a small but growing field that draws principles from both analog and digital design to create systems that perform specific functions such as stereopsis processors and robot path planning circuits.

THE FACES OF EE

Nafees Kabir
Ph.D. candidate

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