Wayne A. Anderson

Publications

1. Ji, Chunhai. Anderson, Wayne A. Poly-Si thin films by metal-induced growth for photovoltaic applications [Journal Article] Solar Energy Materials & Solar Cells. v 85 n 3 Jan 31 2005. p 313-320
2. Park, Mi-Ran. Anderson, Wayne A. Park, Seong-Ju. Improved low resistance contacts of Ni/Au and Pd/Au to p-type GaN using a cryogenic treatment [Journal Article] MRS Internet Journal of Nitride Semiconductor Research. v 5 n SUPPL. 1 2000. 6p
3. Ji, Chunhai. Anderson, Wayne A. Effects of film interfaces on the properties of poly-Si grown by the metal-induced technique for solar cell applications [Conference Paper] Materials Research Society Symposium - Proceedings Critical Interfacial Issues in Thin-Film Optoelectrocnic and Energy Conversion Devices. v 796 2003. p 45-50
4. Teng, Lihong. Anderson, Wayne A. Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD [Conference Paper] Materials Research Society Symposium - Proceedings. v 769 2003. p 41-46
5. Ji, Chunhai. Anderson, Wayne A. Improved electrical properties in nanocrystalline Si formed by metal induced growth [Conference Paper] Materials Research Society Symposium - Proceedings. v 762 2003. p 735-740
6. Ji, Chunhai. Anderson, Wayne A. Metal-induced grown Si nanostructures for large-area-device applications [Journal Article] IEEE Transactions on Electron Devices. v 50 n 9 September 2003. p 1885-1889
7. Teng, Lihong. Anderson, Wayne A. Thin-film transistors on plastic and glass substrates using silicon deposited by microwave plasma ECR-CVD [Journal Article] IEEE Electron Device Letters. v 24 n 6 June 2003. p 399-401
8. Teng, Lihong. Anderson, Wayne A. The effect of hydrogen incorporation on the performance of nanocrystalline silicon thin film transistors fabricated by microwave ECR plasma CVD [Conference Paper] Materials Research Society Symposium - Proceedings. v 737 2003. p 469-474
9. Ji, Chunhai. Anderson, Wayne A. Si nanocrystals by metal induced growth using different catalyzing metals [Conference Paper] Materials Research Society Symposium - Proceedings. v 737 2003. p 655-660
10. Ji, Chunhai. Guliants, Elena A. Abeysinghe, Don. Anderson, Wayne A. Self-organized Si nanowires with room-temperature photo-emission [Conference Paper] Materials Research Society Symposium - Proceedings. v 728 2002. p 157-162
11. Guliants, Elena A. Carreon, Moises A. Abeysinghe, Don C. Ji, Chunhai. Anderson, Wayne A. Guliants, Vadim V. Quantum size effect silicon structures via molecularly self-assembled hybrid templates [Conference Paper] Materials Research Society Symposium - Proceedings. v 728 2002. p 71-76
12. Park, Mi-Ran. Song, Young-Joo. Anderson, Wayne A. Microstructure and electrical properties of low temperature processed ohmic contacts to p-type GaN [Journal Article] Etri Journal. v 24 n 5 October 2002. p 349-359
13. Naik, Gaurav A. Anderson, Wayne A. Current transport mechanisms in CuIn1-xGaxSe2 and CIS thin-film solar cells on flexible stainless steel substrates [Conference Paper] Materials Research Society Symposium - Proceedings. v 668 2001. p H3101-H3105
14. Song, Young J. Lee, Hak-Gyu. Teng, Lihong. Anderson, Wayne A. Nanocrystalline silicon by microwave CVD for thin film transistors and solar cells [Conference Paper] Materials Research Society Symposium - Proceedings. v 638 2001. p F14221-F14225
15. Park, Mi-Ran. Anderson, Wayne A. Park, Seong-Ju. Improved low resistance contacts of Ni/Au and Pd/Au to p-type GaN using a cryogenic treatment [Conference Paper] Materials Research Society Symposium - Proceedings. v 595 2000. Materials Research Society, Warrendale, PA, USA. p W11.77.1 - W11.77.6
16. Song, Young J. Anderson, Wayne A. Stable amorphous silicon and improved microcrystalline silicon by photon-assisted electron cyclotron resonance chemical vapor deposition [Journal Article] Materials Research Society Symposium Proceedings. v 557 1999. p 49-54
17. Hong, Hyesook. Anderson, Wayne A. Cryogenic processed metal-semiconductor-metal (MSM) photodetectors on MBE grown ZnSe [Journal Article] IEEE Transactions on Electron Devices. v 46 n 6 1999. p 1127-1134