UB - University at Buffalo
  
Electrical Engineering


 

Embedded circuits

Douglas Hopkins

Dr. Hopkins teams up with other UB faculty to develop a new class of embedded circuits able to function in hostile, high-temperature environments. Where normal circuits are limited to 150 o C, advanced silicon carbide (SiC) power semiconductors now operate at 350 o C, making them useful for severe commercial and military applications.

              Sophisticated materials characterization and model development provide predictive reliability modeling of several circuit configurations developed by Dr. Hopkins. The electro-physical topology provides a dense, high temperature, and air-cooled circuit.

              By successfully mating a SiC device to a metalized composite, Dr. Hopkins and his collaborators are developing a circuit capable to endure repeated temperature shifts between -55 o C and +225 o C. The project is funded by the Naval Research Laboratory.

photo of embedded circuit

 

 

HIGHLIGHT

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In a collaboration between a UB EE group and an interdisciplinary group, an EE graduate student has demonstrated the ability to trap 2.5um diameter polysterene microspheres in a matrix using a single scanning laser beam.

THE FACES OF EE

Bill Kirkey
Ph.D. candidate (Optics and Materials)

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