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6. “Concepts of
terahertz and infrared photodiodes and phototransistors based on graphene
structures,” V. Ryzhii, N. Ryabova,
M. Ryzhii, V. Mitin, and T. Otsuji, Book Chapter, 2012.
5. “Terahertz
and infrared photodetectors based on multiple graphene layer and nanoribbon
structures,” V. Ryzhii, N. Ryabova, M. Ryzhii, N.V. Baryshnikov,
V.E. Karasik, V. Mitin, and T. Otsuji, Optoelectronics Review, Vol 20,
No.1, pp. 15-25, 2012.
4.
“Quantum-dot photodetectors: In search of optimal design for
room-temperature operation,” V. Mitin, L. Chien, N. Vagidov, and A.
Sergeev, in “Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy”, Edited by S. Luryi, J. Xu, A. Zaslavsky, John Wiley & Sons,
2010, pp.
385-394.
3.
“Graphene-Based Terahertz
Devices: Concepts and Characteristics,” V. Ryzhii, M. Ryzhii, A. Satou, T Otsuji, V. Mitin, F.T. Vasko, A.A. Dubiniv, V.Y Aleshkin, and M. Shur,
in “Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy”, Edited by S. Luryi, J. Xu, A. Zaslavsky, John Wiley & Sons,
2010, pp.
293-306.
2. "Generation-Recombination
Noise in Semiconductors," V. Mitin, L. Reggiani, and L. Varani,
Invited Chapter 2 in a book “Noise and Fluctuation Control in
Electronic Devices,” American Scientific Publishers, edited by A.
Balandin, 2002, pp. 11- 29.
1. "Recombination and Ionization Processes at Impurity Centers in Hot
Electron Semiconductor Transport," L. Reggiani and V. Mitin, La
Rivista del Nuovo Cimento, 1989, Vol. 12, the whole issue No. 11, pp. 1-90.
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