• Born:May 20, 1938, Jamestown, New York
• Married, two children

• University at Buffalo,1961, B.S.E.E
• University at Buffalo,1965, M.S.E.E
• University at Buffalo,1970, Ph.D

• Research Engineer, Great Lakes Carbon Corp, 1961-1966
• Instructor, SUNY at Buffalo, 1966-1970
• Assistant Professor, Rutgers University, 1970-1976
• Associate Professor, Rutgers University, 1976-1978
• Associate Professor, SUNY at Buffalo, 1978-1981
• Professor, SUNY at Buffalo, 1981-
• Associate Chairman, ECE, 1983-1989, 1995-1998
• Chairman, ECE, 1989-1995
• Director, Center for Electronic and Electro-optic Materials, 1985-1996
• Associate Director, Center for Advanced Photonic and Electronic Materials, 1996-

• Exxon Enterprises, 1970-1974
• Amerace Esna Corp., 1973-1976
• Zaromb Research Corp., 1976
• CDC Research Inc., 1976
• Plasma Physics Corp., 1975-
• Southeastern Center for Electrical Engineering Education, 1980-1984
• Teledyne Taber, 1984
• Ohmtek, 1978-1990
• Vivadent, 1986-1991
• Micropen, 1991
• Leica, 1993
• Advanced Refractory Tech, 1994-
• Ohmcraft?1994-
• Standard Ceramics 1997-

Professional and Honorary Societies and Activities:[top]

• Tau Beta Pi
• Pi Lambda Tau
• Sigma Xi
• IEEE (Senior Member) - (Board of Directors) - (Buffalo Section - 1979 to 1980 and 1981 to 1984)
• American Physical Society
• International Solar Energy Society (Member, Board of Directors, Physics Division) (1979 - 1981)
• Who's Who in Technology Today
• International Who's Who in Engineering
• Who's Who in the East
• Who's Who in American Education
• Who's Who in America
• Who's Who in Science and Engineering
• American Men & Women of Science

• Chairman of Steering Committee of International Students Inc. 1982
• Established a Physics Program at West Seneca Christian School 1980-1984
• Member - Board of Deacons at First Baptist Church of West Seneca 1984-1987
• IEEE Program Evaluator for the Educational Activities Board 1988-1990
• Engineering Advisory Committee for Cedarville College 1987-1994

Reviewer for: [top]

• National Science Foundation
• Natural Sciences and Engineering Research Council of Canada
• Solar Cells - Journal
• IEEE Electron Devices Letters - Journal
• IEEE Transactions on Electron Devices - Journal
• Solid State Electronics - Journal
• Research Corporation
• Prentice Hall
• Brown Publishers
• Thin Solid Films - Journal
• Solar Energy - Journal
• Marcel Dekker, Inc.
• West Education Publishing
• Journal of Electronic Materials

• A.E. Delahoy, Schottky Barrier Diodes and their Application to Solar Energy Conversion, May 1975, M.S.
• H.M. Sheldon, Solid-State AC Time-Delay Relay, June 1975, M.S.
• P.T. Ho, A Study of Second Harmonic Power Amplification in TRAPATT Devices, January 1976, Ph.D.
• S.M. Vernon,Fabrication and Performance Studies on Chromium-Silicon Schottky Barrier Solar Cells, January 1976, M.S.
• B.D. Rosenthal, A. Low Power Monolithic COS/MOS Chopper Stabilized Op-Amp, May 1976, M.S.
• J.P. Tobak, The Application of DC-DC Energy Conversion in a Solar Energy System, May 1977, M.S.
• J.K. Kim, Interface State Effects and Characterization of MIS Solar Cells, May 1979, Ph.D.
• S.L. Hyland, MIS Solar Cells on Wacker Chemitronic Polycrystalline Silicon, May 1979, M.S.
• A.E. Delahoy, Electron-Beam Evaporated Silicon Films for MIS Photovoltaics: Properties of Films and Devices, May 1979, Ph.D.
• R. Ferraglio, Radiation Effects on MIS Solar Cells, October 1979, Ph.D.
• K. Rajkanan, Current Conduction Mechanism and Design Optimization Study of MIS Solar Cells, May 1980,Ph.D.
• R. Lahri, Schottky and P-I-N Hydrogenated Amorphous Silicon Structures: Fabrication, Characterization and Modeling, September 1982, Ph.D.
• G. Rajeswaran, Interface and Intergrain Effects in Metal-lnsulator- Semiconductor Solar Cells, January 1983,Ph.D.
• A.P. Bhatt, Analysis of Electrical Properties of Semiconducting Polyphenylacetylene (PPA), September 1983,Ph.D.
• F.Y.T. Kai, Grain Boundary Effects and Passivation Studies in Polycrystalline MIS Solar Cells, September 1983, Ph.D.
• M.A. Jackson, Formation and Characterization of Electron Beam Deposited Silicon Films, September 1983,M.S.
• M.L. Thayer, Radiation Effects in MIS and SIS Solar Cells, August 1984, M.S.
• S.A. Solaun, Radiation Effects on MINP Solar Cells, August 1984, M.S.
• B.B. Rao, Process Variables for Ion-Implanted MINP and MNP-P Silicon Solar Cells, February 1985, Ph.D.
• C.L. Au, Temperature Coemcient of Resistance Study on Nickel-Chrome Thin Film Resistors, September 1986, M.S.
• S. Banerjee, Radiation Damage And Hardening in MINP Solar Cells, September 1986, Ph.D.
• K.Reinhardt, Study of InP Metal-Semiconductor and Thin Insulator Metal-Insulator-Semiconductor Diodes,May 1988, M.S.
• C.L. Au, Post Deposition Annealing Study of Tantalum Nitride Thin Film Resistors, May 1989, Ph.D.
• K.M. Schmitz, Ohmic Contacts to p-Type GaAs, Sept. 1989, M.S.
• Y.S. Lee, Metal-Semiconductor Contacts and Electrically-Active Defects in N- Type InP, Feb. 1990, Ph.D.
• A.J. Soltyka, Current Mechanisms in Heterostructure p-n Junctions, May, 1990, M.S.
• R. Kupka, Ohmic Contacts to n-type GaAs, Feb. 1991, M.S.
• Q.X. Jia, Thin Films for Superconductor Applications Using Magnetron Sputtering, May, 1991, Ph.D.
• K. Jiao, Characterization of III-V Semiconductor Homo- and Hetero-Epitaxial Layers, Feb. 1992, Ph.D.
• M.A. Jackson, Studies of the Structural and Electrical Properties of the SiO2/Si Interface via Angle Resolved ESCA, Null Ellipsometry and Q-S C-V Measurements, May, 1992, Ph.D.
• L. He, Processing of Gallium Arsenide and Indium Phosphide by Plasma Etching and lon Implantation, Sept. 1992, Ph.D.
• Z.Q. Shi, High Barrier Height Metal-Semiconductor Diodes on Indium Phosphide, Sept. 1992, Ph.D.
• J. Palmer, Conduction Mechanisms in Silicon Thin Films on Metal Substrates, Sept. 1993, M.S.
• B. Jagannathan, A Study of Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells, 1993, M.S.
• J. Yi, Properties and Applications of Thin Film Amorphous and Microcrystalline (Poly) Silicon, Feb. 1994,Ph.D.
• R. Pearson, Germanium Implanted Polysilicon Thin Film pMOS Transistors, Feb. 1995, Ph.D.
• H.J. Lee, Barrier Height Enhancement of Schottky Diodes on N-InO.53GaO.47As by Cryogenic Processing, Feb. 1995, Ph.D.
• L.H. Chang, "Ferroelectric Thin Film Capacitors for Semiconductor Memory Applications", Sept. 1995, Ph.D.
• A.Z.H. Wang, "Schottky Contacts to ZnS0.07Se0.93: Mechanisms and Applications", Jan. 1996, Ph.D.
• J. Palmer, “Characterization and Applications of Cryogenic Processed Schottky Contacts to Indium Phosphide”, Sept. 1996, Ph.D.
• J. Egerer, “Thinner Ferroelectric Films for Applications as Capacitors and Gate Dielectrics”, Sept. 1996, M.S.
• E. Ma, “On the Study of Ruthenium Oxide/Tantalum Nitride Double Layer Thin Film Resistors”, Sept. 1996, Ph.D.
• B. Jagannathan, “Thin Film Silicon by a Microwave Plasma Deposition Technique…”, Jan.1998, Ph.D.
• H. Hong, “Processing, Mechanisms, and Applications in p-ZnSSe/p+ GaAs Heterostructures,” July 1998, Ph.D.
• Y. Song, "Amorphous & Microcrystalline Silicon Thin Films Grown by Photon-Assisted Electron Cyclotron Resonance Chemical Vapor Deposition for Heterojunction Solar Cells & Thin Film Transistor," May 2000, Ph.D.
• E. Guliants, "Polycrystalline Silicon Thin Films by Metal-Induced Growth: Formation Mechanisms, Characterization and Applications," May 2000, Ph.D.
• M. Park, “Ohmic Contacts for Wide Bandgap Semiconductors: Processing, Properties and Mechanisms,” Sept. 2000, Ph.D.
• G. Naik, “Characterization of Copper Indium Gallium Selenide (CIGS) Solar Cells Fabricated on Flexible Light-Weight Stainless Steel Substrates for Space Applications,” May 2001, M.S.
• H-G Lee, “Characteristics of Amorphous Silicon Thin Film Grown by Microwave-Generated Plasma Chemical Vapor Deposition for Solar Cells,” February 2002, M.S. Thesis.
• J-H Jeung, “Solar Cell Grid Optimization,” June 2002, M.S. Thesis.

• Chi Au - Rockwell International
• Sonali Banerjee - Tata Institute of Technology
• L.H. Chang - National Tsing-Hua University
• Alan Delahoy - Energy Photovoltaics
• Jens Egerer - Fraunhofer Institute
• Elena Guliants -Taitech
• Lili He - Northern Illinois University
• P.T. Ho - RCA Laboratories
• Hyesook Hong - Texas Instruments
• Michael Jackson - Rochester Institute of Technology
• B. Jagannathan? IBM
• J-H Jeung - Samsung
• Quanxi Jia - Los Alamos National Laboratory
• Kaili Jiao - MicroCoating Technologies
• Jin Kim - Samsung Corp.
• R. Lahri - National Semiconductor
• H.J. Lee - Samsung Corp.
• Y.S. Lee - Industrial Technology Research Institute (Taiwan)
• E. Ma - Cypress Semiconductor
• G. Naik - Alphion Corp
• Joseph Palmer -Texas Instruments
• MiRan Park - ETRI (Korea)
• R. Pearson - Rochester Institute of Technology
• G. Rajeswaran - Eastman Kodak
• Bhasker Rao - California Micro Devices, Vice President & General Manager
• K. Reinhardt - Wright Patterson AFB
• Bruce Rosenthal - Hewlett Packard
• Karen Schmitz - Westinghouse Electric
• Z.Q. Shi - Emcore Corp.
• Sara Solaun - IBM
• Y. Song - ETRI (Korea)
• A.J. Soltyka - Calspan Corp.
• Matt Thayer - Texas Instruments
• Rick Wallace - Evergreen Solar
• Albert Wang - National Semiconductor
• Junsin Yi - Sung Kyun Kwan University

• 140. N. Sridhar, D.D.L. Chung, W.A. Anderson and J. Coleman, “Effect of Deposition Temperature on the Structural and Electrical Properties of Laser-Crystallized Hydrogenated Amorphous Silicon Films”, J. Appl. Phys., 79(3), 1569-1577, 1996.
• 141. A. Wang and W.A. Anderson, “Metal-Semiconductor Contacts to n-ZnS0.07Se0.93”, J. Elec. Mtls., 25, 201-205, 1996.
• 142. A. Wang and W.A. Anderson, “Fabrication and Characterization of a Depletion-Mode ZnS0.07Se0.93 MESFET”, IEEE Elec. Dev. Lett., 17, 217-219,? May 1996.
• 143. B. Jagannathan and W.A. Anderson, “Interface Effects on the Carrier Transport and Photovoltaic Properties of Hydrogenated Amorphous Silicon/Crystalline Silicon Solar Cells”, Solar Energy Materials and Solar Cells, 44, 165-176, 1996.
• 144. W.A. Anderson, J.W. Palmer and Z.Q. Shi, “Schottky Barrier Contacts to n-InP”, Defect and Diffusion Forum, Vols. 136-137, pp. 21-40 (1996).? (invited review paper)
• 145. J.W. Palmer and W.A. Anderson, “Cross-Sectional TEM of Pd/InP and Au/InP Interfaces Formed at Substrate Temperatures Near 300 and 77K”,? J. Elect. Mtls., Vol. 25, pp. 1645-1651, 1996.
• 146. L.H. Chang and W.A. Anderson, “Stability of BaTiO3 Thin Films on Si”, Appl. Surface Sci. 92, 52-56, 1996.
• 147. L.H. Chang and W.A. Anderson, “Single and Multilayer Ferroelectric PbZrxTi1-xO3 (PZT) on BaTiO3”, Thin Solid Films, 303, pp.94 -100, 1997.
• 148. B. Jagannathan and W.A. Anderson, “Amorphous Silicon/p-type Crystalline Silicon Heterojunction Solar Cells”, Solar Energy Materials and Solar Cells, 46, pp.289 - 310, 1997.
• 149. Jagannathan and W.A. Anderson, “Defect Study in Amorphous Silicon/crystalline Silicon Solar Cells by Thermally Stimulated Capacitance”, J. Appl. Phys., 82, pp.1930 - 1935, 15 Aug 1997.
• 150. J. Palmer, W.A. Anderson and A.N. Cartwright, “Novel Metal-Semiconductor-Metal Photodetectors on Bulk Semi-Insulating Indium Phosphide”, Photonics Tech. Lett.,9, pp.? 1385-1387,? Oct. 1997.
• 151. H. Hong, W.A. Anderson, J. Haetty, A. Petrou, E.H. Lee, H.C. Chang, M.N. Na, H. Luo, J. Peck, & T.J. Mountziaris, “Optical and Electrical Characterization of Nitrogen Ion Implanted ZnSSe / p-GaAs (100), J. Appl. Phys., 82, pp 4994 - 4999, 15 Nov. 1997.
• 152. E. Ma and W.A. Anderson, “Mechanism of Stabilizing RuO2/Ta2N Double Layer Thin Film Resistors”, Materials Science and Engineering, B47, 161-166, 1997.
• 153. W.A. Anderson, B. Jagannathan and E. Klementieva, “Lightweight, Thin-Film Si Heterojunction Solar Cells”, Progress in Photovoltaics: Research and Applications, 5, 433-441, 1997.
• 154. B. Jagannathan, R.L. Wallace and W.A. Anderson, “Structural and Electrical Properties of Thin Microcrystalline Films Deposited by an ECR Plasma Discharge of 2% SiH4/Ar Further Diluted in H2”, J.Vac.Sci. and Tech., 16, 2751-2756, Sept. 1998.
• 155. H. Hong, W.A. Anderson, J. Haetty, E.H. Lee, H.C. Cheng, M.H. Na, H. Luo and A. Petrou, “Nitrogen Ion Implanted ZnSe/GaAs? p-i-n Photodiodes”, J. Appl. Phys., 84, 3328-2333, 15 Aug. 1998.
• 156. Y.J. Song and W.A. Anderson, “Improved Hydrogenated Amorphous Silicon Thin Films by Photon Assisted Microwave Electron Cyclotron Resonance Chemical Vapor Deposition,” Appl. Phys. Lett., 74, 67-69, 4 Jan. 1999.
• 157. M.R. Park, W.A. Anderson, M. Jeon and H. Luo, “Ohmic Contacts to n-Type and p-Type ZnSe”, Solid State Electronics, 43, 113-121, 1999.
• 158. H. Hong and W.A. Anderson, “Cryogenic Processed Metal-Semiconductor-Metal (MSM) Photodetectors on MBE-Grown ZnSe,” IEEE Trans. on Electron Devices, 46, 1127-1134, June 1999.
• 159. E. Guliants and W.A. Anderson, "Characterization of Poly-Si Thin Films Deposited by Magnetron Sputtering onto Ni Prelayers," J. Appl. Phys., 87, 3532-3536, 1 April 2000.
• 160. Y.J. Song and W.A. Anderson, “Amorphous Silicon Heterojunction Solar Cells with a Microcrystalline Silicon Buffer Layer,” Solar Energy Materials and Solar Cells, 64, 241-249, 2000.
• 161. Y.J. Song, M.R. Park, E. Guliants, W.A. Anderson, “Influence of Defects and Band Offsets on Carrier Transport Mechanisms in Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells,” Solar Energy Materials and Solar Cells, 64, 225-240, 2000.
• 162. E.A. Guliants and W.A. Anderson, L.P. Guo, V.V. Guliants, “Transmission Electron Microscopy Study of Ni Silicides Formed During Metal Induced Silicon Growth,” Thin Solid Films, 385, 74-80, 2001.
• 163. E.A. Guliants and W.A. Anderson, “A Novel Method of Structure Control in Si Thin Film Technology,” J. Electrochemical Society, 148, G156, March 2001.
• 164. C.M. Fortmann, E.L. Jaen, N. Hata, W.A. Anderson, and A.H. Mahan, “Hot Wire Deposition of Photonic Grade Amorphous Silicon,” Thin Solid Films, 395, 142, 2001.
• 165. ?C.M. Fortmann, E.L. Jaen, W.A. Anderson, A.H. Mahan, and N. Hata, “Progress in Deposited Refractive Index Engineered Materials and Devices,” SPIE, Vol. 4459A, 2001 (in press).
• 166. E.A. Guliants, C. Ji, and W.A. Anderson, “The Role of Nulceation and Heteroepitaxial Processes in Nanostructuring of Si,” J. Electronic Materials, (in press).

• P.Ehrlich and W.A.Anderson ,"Polyphenylacetylene:A Semicondcting Photoconductor", Chapter 12 in Handbook of Semiconducting Polymers, edited by R.Sktheim and pUBLISHED BY Marcel Dekker, New York, pp.441-488, 1986.
• W.A. Anderson and k.L. Jiao, "Deep Levels in InP and Related Materials", Indium Phosphide and Related Materials: Processing, Technology and Devices, edited b Avishay Katz, Artech House, Boston-London, 1992.
• F.Collins, E. Ma and W. A. Anderson, "Thin Film Resistors", Encyclopedia of Electrical Engineering, edited by John Webster, John Wiley & Sons, 1999.

• "A Metal-Graphite Connection", Issued in 1966.
• "Photoconductors Based Upon a Semiconducting Plastic Flim", with Ehrlich, Kang and Bhatt, Issued in 1986.
• "Thin Flim Capacitors", with Hamilton, Jia and Shi, Issued Feb. 14, 1995, #5, 390, 072.
• "Thin Flim Resistors Comprising Ruthenium Oxide", with F.M.Collins, Q,Jia, K.Jiao and H.J.Lee, Issued Dec.17,1996, #5,585,776.
• "Nanocrystalline Layer Thin Film Capacitors", with Q.Jia, J.Yin and L.H.Chang, Issued Dec.24, 1996, #5, 587,870.
• "Thin Film Capacitor", with Chang, Issued Nov. 2, 1999, #5, 978,207.