EE453/553 Microelectronic Fabrication Lab - Spring 2003

(EE453 - Registration #384025, EE553 - Registration #485709)

Prof. Wayne A. Anderson

217C Bonner Hall

waanders@eng.buffalo.edu

[Project] [Some Reading] [Grading] [Office Hours] [Preliminary Schedule] [Report Guidelines]

Project: Design and fabricate three MIS photovoltaic diodes. Plan for 2 or 3 PV diagnostic diodes for C-V and I-V data, and thin film resistors.

A) Fabrication will include:

	- mask design	- metallization
	- chemical prep.	- contact design
	- oxidations	- ohmic contact formation
	- oxide masking	- antireflection coating
	- photolithography

B) Testing will include:

	4-point probe	CV: N_A, f_b, etc.
	Ellipsometry	Spectral Response
	IV: I_o, n, f_b	Photovoltaic Efficiency

C) All designs must be shown in full detail. No guesswork.

D) Devices will have different designs for different students. Diagnostic diodes must all be the same size. Solar cell grid designs are variable. The main variables will be oxide thickness, Cr vs. Al Schottky metal and grid design.

Some Reading

Solid State Electronic Devices, Ben Streeman, 4th edition

183-190 Metal/Semi Contacts

130-135 Photolithography

336-342 I.C. Fabrication

You may find other references too.

Grading

1. Quality of lab work = 25 percent (care in experiments, good planning, proper use of equipment, punctuality, etc.)

2. Exam = 25 percent

3. Report = 50 percent

Office Hours

Tuesday & Wednesday, 1-1:30 pm

Preliminary Schedule

Week of

1/13 & 1/20 Introduction, handouts, description of problem, Schottky diode theory procedures, (diode diameter)

1/27 Issues in design, photovoltaics, review all processes, (layout with dimensions)

2/3 Designs finished, method of layout and patterning, (Artwork on graph paper. Rubylith - or, computer-generated design.)

2/10 Make glass masks in lab

2/17 4 point probe, chemicals

2/24 Wafer cleaning, oxide growth, ellipsometry in lab

3/3 Photoresist and back metal in lab

3/10 VACATION J

3/17 Front surface clean, thin oxide growth, photoresist for lift-off, metallize for Schottky in lab

3/24 PR, front metallization for grid, lift-off

3/31 Testing PV & SR

4/7 Testing IV & CV

4/14 A/R coating and Ellips

4/21 EXAM

Note 1: Final reports are due on or before May 6.

Note 2: Report chapters will be due one week after that process is completed in the lab.

Late chapters will lose credit.

All lab work must be recorded in the notebook (National 43-649), Roaring Spring 77649 or equivalent, which may be purchased in the bookstore.

Report Guidelines

Chapter

1. Statement of Problem

a. design goals

b. design restrictions

Device Design (include equations, etc.)

a. key equations and calculations

b. layout considerations

Artwork and Photography

a. show masks and dimensions

2. Oxide Growth and Ellipsometry

a. designed thickness and color

b. growth equipment

c. ellipsometry – how it work and calculations

d. photoresist

3. Ohmic Contact

a. various techniques

b. details of the one you used

4. Rectifying Contact

a. techniques and designs

b. thin oxide for surface passivation

c. metallization and patterning

Antireflection Coating

a. design

b. deposition and properties

5. Leads, Probes, and Equipment for Testing

Test data: C-V, I-V, rectification, data analysis

Compare test data to theory and conclusions

Bibliography and References

Note 1:

Each Chapter

Title
Abstract
Introduction (what [any important questions?], why)
Technique (how)
Discussion (were results good or bad?, any problems? any better ways of doing it?)
Conclusions
References
Tables
Figures (use important ones, which I gave you and new ones too)

Note 2:

Reader must be able to pick up your Chapter and repeat what you did.

Last update: 01/02/2003